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1 Ergebnisse
1
Determination of the Junction Temperature Under Load Curren..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Goller, Maximilian
;
Franke, Jorg
;
Lentzsch, Tobias
... - p. 498-501 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579696
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Determination of the Junction Temperature Under Load Current in GaN Power Devices with Schottky Gate Leakage Current as TSEP</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579696&Exemplar=1&LAN=DE A1 Goller, Maximilian A1 Franke, Jorg A1 Lentzsch, Tobias A1 Lutz, Josef A1 Basler, Thomas A1 Mouhoubi, Samir A1 Curatola, Gilberto YR 2024 SN 1946-0201 K1 Temperature measurement K1 Temperature sensors K1 Semiconductor device measurement K1 Impedance measurement K1 Current measurement K1 Logic gates K1 Sensors K1 GaN HEMT K1 TSEP K1 Schottky gate leakage K1 power cycling K1 online temperature monitoring SP 498 OP 501 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579696 DO https://doi.org/10.1109/ISPSD59661.2024.10579696 SF ELIB - SuUB Bremen
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