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1
On-Line Digital Fine Monitoring of SiC MOSFET Gate-Oxide He..:
, In:
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Picot-Digoix, M.
;
Le, T-L
;
Azzopardi, S.
... - p. 84-87 , 2024
Link:
https://doi.org/10.1109/ISPSD59661.2024.10579698
RT T1 <cTitle>2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>On-Line Digital Fine Monitoring of SiC MOSFET Gate-Oxide Health: A Dual-Channel Gate Driving Approach</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10579698&Exemplar=1&LAN=DE A1 Picot-Digoix, M. A1 Le, T-L A1 Azzopardi, S. A1 Vinnac, S. A1 Richardeau, F. A1 Blaquiere, J-M. YR 2024 SN 1946-0201 K1 Resistors K1 MOSFET K1 Semiconductor device measurement K1 Silicon carbide K1 Switches K1 Logic gates K1 Pulse width modulation K1 SiC MOSFET K1 health monitoring K1 gate driver K1 gate oxide SP 84 OP 87 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD59661.2024.10579698 DO https://doi.org/10.1109/ISPSD59661.2024.10579698 SF ELIB - SuUB Bremen
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