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1 Ergebnisse
1
A Novel Si/SiC Heterojunction Trench MOSFET with Electron T..:
, In:
2024 IEEE 2nd International Conference on Power Science and Technology (ICPST)
,
Chen, Wei
;
Yuan, Jun
;
Guo, Fei
... - p. 99-103 , 2024
Link:
https://doi.org/10.1109/ICPST61417.2024.10602073
RT T1 <cTitle>2024 IEEE 2nd International Conference on Power Science and Technology (ICPST)</cTitle>: T1 <Title>A Novel Si/SiC Heterojunction Trench MOSFET with Electron Tunneling Enhanced and P+ Shielding Region for Improved On-State Resistance</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10602073&Exemplar=1&LAN=DE A1 Chen, Wei A1 Yuan, Jun A1 Guo, Fei A1 Cheng, Zhijie A1 Wu, Yangyang A1 Wang, Kuan A1 Xin, Guoqing A1 Wang, Zhiqiang YR 2024 K1 Resistance K1 Performance evaluation K1 Silicon carbide K1 Numerical analysis K1 Heterojunctions K1 Tunneling K1 Logic gates K1 Silicon (Si) K1 Silicon carbide (SiC) K1 heterojunction K1 channel mobility K1 specific on-resistance SP 99 OP 103 LK http://dx.doi.org/https://doi.org/10.1109/ICPST61417.2024.10602073 DO https://doi.org/10.1109/ICPST61417.2024.10602073 SF ELIB - SuUB Bremen
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