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1 Ergebnisse
1
Engineering HZO by Flat Amorphous TiN with 0.3nm Roughness ..:
, In:
2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Zhao, Zefu
;
Chen, Yu-Rui
;
Liao, Yu-Tsung
... - p. 1-2 , 2024
Link:
https://doi.org/10.1109/VLSITechnologyandCir46783.2024..
RT T1 <cTitle>2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Engineering HZO by Flat Amorphous TiN with 0.3nm Roughness Achieving Uniform c-Axis Alignment, Record High Breakdown Field (~10nm HZO), and Record Final 2Pr of 56 μC/cm2 with Endurance > 4E12</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10631450&Exemplar=1&LAN=DE A1 Zhao, Zefu A1 Chen, Yu-Rui A1 Liao, Yu-Tsung A1 Chen, Yun-Wen A1 Hsieh, Wan-Hsuan A1 Wang, Jer-Fu A1 Chen, Yu-An A1 Lu, Hao-Yi A1 Hsu, Wei-Teng A1 Lee, Dai-Ying A1 Lee, Ming-Hsiu A1 Liu, C. W. YR 2024 SN 2158-9682 K1 Atomic measurements K1 Electric breakdown K1 Capacitors K1 Lattices K1 Superlattices K1 Tin K1 Very large scale integration SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/VLSITechnologyandCir46783.2024.10631450 DO https://doi.org/10.1109/VLSITechnologyandCir46783.2024.10631450 SF ELIB - SuUB Bremen
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