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Highly manufacturable Self-Aigned Direct Backside Contact (..:

, In: 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),

Park, Jaehyun ; Park, Juhun ; Hwang, Kyuman... - p. 1-2 , 2024

Link: https://doi.org/10.1109/VLSITechnologyandCir46783.2024..

RT 
T1 <cTitle>2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Highly manufacturable Self-Aigned Direct Backside Contact (SA-DBC) and Backside Gate Contact (BGC) for 3-dimensional Stacked FET at 48nm gate pitch</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10631556&Exemplar=1&LAN=DE
				
A1 Park, Jaehyun
A1 Park, Juhun
A1 Hwang, Kyuman
A1 Yun, Jinchan
A1 Kim, Dahye
A1 Park, Sungil
A1 Park, Jejune
A1 Yang, Jinwook
A1 Jeong, Jae Won
A1 Yun, Chuljin
A1 Bae, Jinho
A1 Park, Sam
A1 Huh, Daihong
A1 Kim, Sanghyeon
A1 Baek, Seungeun
A1 Yang, Suk
A1 Zoh, Inhae
A1 Lee, Junghan
A1 Kim, Tae-sun
A1 Ha, Younsu
A1 Lee, Sun-Jung
A1 Park, Sang Wuk
A1 Kuh, Bong Jin
A1 Ha, Daewon
A1 Hyun, Sangjin
A1 Ahn, Su Jin
A1 Song, Jaihyuk
YR 2024
SN 2158-9682
K1 Scalability
K1 Field effect transistors
K1 Logic gates
K1 Very large scale integration
K1 Routing
K1 Threshold voltage
K1 Logic
SP 1
OP 2
LK http://dx.doi.org/https://doi.org/10.1109/VLSITechnologyandCir46783.2024.10631556
DO https://doi.org/10.1109/VLSITechnologyandCir46783.2024.10631556
SF ELIB - SuUB Bremen

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