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Low noise, 17-GHz GaAs FET with ion-implanted channel:

, In: 1976 IEEE International Solid-State Circuits Conference. Digest of Technical Papers,
Ladd, G. ; Lundgren, R. ; Cleary, F.. - p. 169 , 1976
Link: https://doi.org/10.1109/ISSCC.1976.1155531