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1 Ergebnisse
1
A 16ns 16K bipolar RAM:
, In:
1983 IEEE International Solid-State Circuits Conference. Digest of Technical Papers
,
Kato, Y.
;
Odaka, M.
;
Ogiue, K.
.. - p. 106,107 , 1983
Link:
https://doi.org/10.1109/ISSCC.1983.1156440
RT T1 <cTitle>1983 IEEE International Solid-State Circuits Conference. Digest of Technical Papers</cTitle>: T1 <Title>A 16ns 16K bipolar RAM</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-1156440&Exemplar=1&LAN=DE A1 Kato, Y. A1 Odaka, M. A1 Ogiue, K. A1 Miwa, H. A1 Matsumura, K. YR 1983 K1 Random access memory K1 Voltage K1 Read-write memory K1 Capacitance K1 Frequency K1 Solid state circuits K1 MOS devices K1 Iron SP 106,107 LK http://dx.doi.org/https://doi.org/10.1109/ISSCC.1983.1156440 DO https://doi.org/10.1109/ISSCC.1983.1156440 SF ELIB - SuUB Bremen
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