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High performance CMOS devices on SOI for 90 nm technology e..:

, In: IEEE International Electron Devices Meeting 2003,

Park, H. ; Clark, W. ; Mocuta, A.C.... - p. 27.4.1-27.4.4 , 2003

Link: https://doi.org/10.1109/IEDM.2003.1269361

RT 
T1 <cTitle>IEEE International Electron Devices Meeting 2003</cTitle>: T1 <Title>High performance CMOS devices on SOI for 90 nm technology enhanced by RSD (raised source/drain) and thermal cycle/spacer engineering</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-1269361&Exemplar=1&LAN=DE
				
A1 Park, H.
A1 Clark, W.
A1 Mocuta, A.C.
A1 Holt, J.
A1 Mo, R.
A1 Sato, T.
A1 Mocuta, D.
A1 Lee, B.H.
A1 Dokumaci, O.
A1 O'Neil, P.
A1 Brown, D.
A1 Rausch, W.
A1 Suenaga, J.
A1 Li, Y.
A1 Brown, L.
A1 Nakos, J.
A1 Hathorn, K.
A1 Ronsheim, P.
A1 Kimura, H.
A1 Doris, B.
A1 Sudo, G.
A1 Scheer, K.
A1 Utomo, H.
A1 Mittl, S.
A1 Wagner, T.
A1 Umebayashi, T.
A1 Tsukamoto, M.
A1 Kohyama, Y.
A1 Cheek, J.
A1 Yang, I.
A1 Kuroda, H.
A1 Toyoshima, Y.
A1 Pellerin, J.
A1 Matsumoto, K.
A1 Schepis, D.
A1 Agnello, P.
A1 Welser, J.
A1 Nii, H.
A1 Kawanaka, S.
A1 Fisher, P.
A1 Oh, S.-H.
A1 Snare, J.
YR 2003
K1 CMOS technology
K1 Space technology
K1 Thermal engineering
K1 Silicides
K1 Thermal resistance
K1 CMOS process
K1 Manufacturing processes
K1 Doping
K1 Inverters
K1 Delay effects
SP 27.4.1
OP 27.4.4
LK http://dx.doi.org/https://doi.org/10.1109/IEDM.2003.1269361
DO https://doi.org/10.1109/IEDM.2003.1269361
SF ELIB - SuUB Bremen

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