I agree that this site is using cookies. You can find further informations here.
X
Merkliste 
 1 Ergebnisse 
 
1

80nm self-aligned complementary I-MOS using double sidewall..:

, In: IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.,
Woo Young Choi ; Jae Young Song ; Byung Yong Choi... - p. 203,204,205,206 , 2004
Link: https://doi.org/10.1109/IEDM.2004.1419108