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1 Ergebnisse
1
Schottky s/d MOSFETs with high-K gate dielectrics and metal..:
, In:
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.
,
Shiyang Zhu
;
Jingde Chen
;
Yu, H.Y.
... - p. 53,54,55,56 , 2004
Link:
https://doi.org/10.1109/ICSICT.2004.1434952
RT T1
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.
: T1
Schottky s/d MOSFETs with high-K gate dielectrics and metal gate electrodes
UL https://suche.suub.uni-bremen.de/peid=ieee-1434952&Exemplar=1&LAN=DE A1 Shiyang Zhu A1 Jingde Chen A1 Yu, H.Y. A1 Whang, S.J. A1 Chen, J.H. A1 Shen, C. A1 Li, M.F. A1 Lee, S.J. A1 Chunxiang Zhu A1 Chan, D.S.H. A1 Anyan Du A1 Tung, C.H. A1 Singh, J. A1 Chin, A. A1 Kwong, D.L. YR 2004 K1 MOSFETs K1 Electrodes K1 Silicides K1 Temperature K1 CMOS technology K1 Hafnium oxide K1 Implants K1 High-K gate dielectrics K1 High K dielectric materials K1 Inorganic materials SP 53,54,55,56 LK http://dx.doi.org/https://doi.org/10.1109/ICSICT.2004.1434952 DO https://doi.org/10.1109/ICSICT.2004.1434952 SF ELIB - SuUB Bremen
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