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1 Ergebnisse
1
Effect of the implantation of fluorine on the mobility of c..:
, In:
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.
,
Zhong-Shan Zheng
;
Zhong-Li Liu
;
Guo-Qiang Zhang
... - p. 277,278 , 2004
Link:
https://doi.org/10.1109/ICSICT.2004.1435005
RT T1 <cTitle>Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.</cTitle>: T1 <Title>Effect of the implantation of fluorine on the mobility of channel electron for partially depleted SOI nMOSFET</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-1435005&Exemplar=1&LAN=DE A1 Zhong-Shan Zheng A1 Zhong-Li Liu A1 Guo-Qiang Zhang A1 Ning Li A1 Kai Fan A1 Qing Lin A1 Zheng-Xuan Zhang A1 Cheng-Lu Lin YR 2004 K1 Electron mobility K1 MOSFET circuits K1 Silicon K1 Atomic layer deposition K1 Content addressable storage K1 Single event upset K1 Annealing K1 Information technology K1 Threshold voltage K1 Temperature SP 277,278 LK http://dx.doi.org/https://doi.org/10.1109/ICSICT.2004.1435005 DO https://doi.org/10.1109/ICSICT.2004.1435005 SF ELIB - SuUB Bremen
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