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1 Ergebnisse
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Fabrication of strained Si channel PMOSFET on thin relaxed ..:
, In:
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.
,
Mei Ding-lei
;
Yang Mo-hua
;
Li Jing-chun
... - p. 325,326,327 , 2004
Link:
https://doi.org/10.1109/ICSICT.2004.1435018
RT T1
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.
: T1
Fabrication of strained Si channel PMOSFET on thin relaxed Si/sub 1-x/Ge/sub x/ virtual substrate
UL https://suche.suub.uni-bremen.de/peid=ieee-1435018&Exemplar=1&LAN=DE A1 Mei Ding-lei A1 Yang Mo-hua A1 Li Jing-chun A1 Yu Qi A1 Zhang Jing A1 Xu Wan-jing A1 Tan Kai-zhou YR 2004 K1 Fabrication K1 MOSFET circuits K1 Silicon germanium K1 Germanium silicon alloys K1 Oxidation K1 Temperature K1 Microelectronics K1 Capacitive sensors K1 Buffer layers K1 Annealing SP 325,326,327 LK http://dx.doi.org/https://doi.org/10.1109/ICSICT.2004.1435018 DO https://doi.org/10.1109/ICSICT.2004.1435018 SF ELIB - SuUB Bremen
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