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1
A comparison study of high-density MIM capacitors with ALD ..:
, In:
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.
,
Shi-Jin Ding
;
Hu, H.
;
Chunxiang Zhu
... - p. 403,404,405,406 , 2004
Link:
https://doi.org/10.1109/ICSICT.2004.1435035
RT T1 <cTitle>Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.</cTitle>: T1 <Title>A comparison study of high-density MIM capacitors with ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminated, sandwiched and stacked dielectrics</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-1435035&Exemplar=1&LAN=DE A1 Shi-Jin Ding A1 Hu, H. A1 Chunxiang Zhu A1 Kim, S.J. A1 Li, M.F. A1 Cho, B.J. A1 Chin, A. A1 Kwong, D.L. YR 2004 K1 MIM capacitors K1 Hafnium oxide K1 Capacitance K1 Breakdown voltage K1 Dielectric substrates K1 Laminates K1 Leakage current K1 High-K gate dielectrics K1 Dielectric measurements K1 Stress SP 403,404,405,406 LK http://dx.doi.org/https://doi.org/10.1109/ICSICT.2004.1435035 DO https://doi.org/10.1109/ICSICT.2004.1435035 SF ELIB - SuUB Bremen
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