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1 Ergebnisse
1
Annealing process influence and dopant-silicide interaction..:
, In:
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.
,
Guo-Ping Ru
;
Yu-Long Jiang
;
Xin-Ping Qu
. - p. 451,452,453,454,455 , 2004
Link:
https://doi.org/10.1109/ICSICT.2004.1435045
RT T1 <cTitle>Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.</cTitle>: T1 <Title>Annealing process influence and dopant-silicide interaction in self-aligned NiSi technology</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-1435045&Exemplar=1&LAN=DE A1 Guo-Ping Ru A1 Yu-Long Jiang A1 Xin-Ping Qu A1 Bing-Zong Li YR 2004 K1 Silicides K1 Rapid thermal annealing K1 Temperature K1 Silicidation K1 Leakage current K1 Schottky diodes K1 Rapid thermal processing K1 Contacts K1 Grain size K1 Conductivity SP 451,452,453,454,455 LK http://dx.doi.org/https://doi.org/10.1109/ICSICT.2004.1435045 DO https://doi.org/10.1109/ICSICT.2004.1435045 SF ELIB - SuUB Bremen
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