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1
The characteristics of Ni (Pt) Si/Si Schottky barrier diode..:
, In:
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.
,
Zhang Li-Chun
;
Jin Hai-Yan
;
Gao Yu-Zhi
... - p. 460,461,462,463 , 2004
Link:
https://doi.org/10.1109/ICSICT.2004.1435047
RT T1 <cTitle>Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.</cTitle>: T1 <Title>The characteristics of Ni (Pt) Si/Si Schottky barrier diode with deep trench</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-1435047&Exemplar=1&LAN=DE A1 Zhang Li-Chun A1 Jin Hai-Yan A1 Gao Yu-Zhi A1 Zhang Hui A1 Huang Wei A1 Lu Jian-Zheng YR 2004 K1 Schottky barriers K1 Schottky diodes K1 Silicides K1 Temperature K1 Annealing K1 Etching K1 Semiconductor films K1 Nickel K1 Stress K1 Electrical resistance measurement SP 460,461,462,463 LK http://dx.doi.org/https://doi.org/10.1109/ICSICT.2004.1435047 DO https://doi.org/10.1109/ICSICT.2004.1435047 SF ELIB - SuUB Bremen
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