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1 Ergebnisse
1
Ni silicide and Ni germanosilicide self-aligned process for..:
, In:
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.
,
Hongxiang Mo
;
Bonfanti, P.
;
Bei Zhu
... - p. 464,465,466,467 , 2004
Link:
https://doi.org/10.1109/ICSICT.2004.1435048
RT T1 <cTitle>Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.</cTitle>: T1 <Title>Ni silicide and Ni germanosilicide self-aligned process for 65nm and beyond CMOS technology by 2-step rapid thermal annealing</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-1435048&Exemplar=1&LAN=DE A1 Hongxiang Mo A1 Bonfanti, P. A1 Bei Zhu A1 Gao, D. A1 Hanming Wu A1 Chen, J. A1 Hui-Zhen Wu A1 Yu-Long Jiang A1 Guo-Ping Ru A1 Chen, F. YR 2004 K1 CMOS technology K1 Silicides K1 CMOS process K1 Rapid thermal processing K1 Rapid thermal annealing K1 Temperature K1 Electrical resistance measurement K1 X-ray diffraction K1 Nominations and elections K1 Spectroscopy SP 464,465,466,467 LK http://dx.doi.org/https://doi.org/10.1109/ICSICT.2004.1435048 DO https://doi.org/10.1109/ICSICT.2004.1435048 SF ELIB - SuUB Bremen
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