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1 Ergebnisse
1
A novel edge contact type cell for phase change RAM using N..:
, In:
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.
,
Yun Ling
;
Yinyin Lin
;
Lianzhang Lai
... - p. 707,708,709,710 , 2004
Link:
https://doi.org/10.1109/ICSICT.2004.1435101
RT T1 <cTitle>Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.</cTitle>: T1 <Title>A novel edge contact type cell for phase change RAM using N-doped GeSbTe films</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-1435101&Exemplar=1&LAN=DE A1 Yun Ling A1 Yinyin Lin A1 Lianzhang Lai A1 Baowei Iao A1 Yunfeng Lai A1 Jie Feng A1 Ting ao Tang A1 Bingchu Cai A1 Bomy Chen YR 2004 K1 Phase change random access memory K1 Threshold voltage K1 Doping K1 Nitrogen K1 Manufacturing K1 Thickness control K1 Electrodes K1 Writing K1 Conductivity K1 Nanostructures SP 707,708,709,710 LK http://dx.doi.org/https://doi.org/10.1109/ICSICT.2004.1435101 DO https://doi.org/10.1109/ICSICT.2004.1435101 SF ELIB - SuUB Bremen
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