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1 Ergebnisse
1
The effects of emitter impurity concentration on the high-c..:
, In:
1976 International Electron Devices Meeting
,
Martinelli, R.U.
;
Jetter, E.
- p. 162,163,164,165 , 1976
Link:
https://doi.org/10.1109/IEDM.1976.189009
RT T1
1976 International Electron Devices Meeting
: T1
The effects of emitter impurity concentration on the high-current gain of silicon NPN power transistors
UL https://suche.suub.uni-bremen.de/peid=ieee-1478721&Exemplar=1&LAN=DE A1 Martinelli, R.U. A1 Jetter, E. YR 1976 K1 Impurities K1 Silicon K1 Power transistors K1 Cutoff frequency K1 Current density K1 Laboratories K1 Solid state circuits K1 Fingers K1 Substrates K1 Temperature SP 162,163,164,165 LK http://dx.doi.org/https://doi.org/10.1109/IEDM.1976.189009 DO https://doi.org/10.1109/IEDM.1976.189009 SF ELIB - SuUB Bremen
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