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1 Ergebnisse
1
An Assessment of Single-Electron Effects in Multiple-Gate S..:
, In:
2005 International Semiconductor Device Research Symposium
,
Lee, Wei
;
Su, Pin
;
Chen, Hou-Yu
... - p. 175,176 , 2005
Link:
https://doi.org/10.1109/ISDRS.2005.1596039
RT T1 <cTitle>2005 International Semiconductor Device Research Symposium</cTitle>: T1 <Title>An Assessment of Single-Electron Effects in Multiple-Gate SOI MOSFETs with 1.6-nm Gate Oxide near Room Temperature</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-1596039&Exemplar=1&LAN=DE A1 Lee, Wei A1 Su, Pin A1 Chen, Hou-Yu A1 Chang, Chang-Yun A1 Su, Ke-Wei A1 Liu, Sally A1 Yang, Fu-Liang YR 2005 K1 MOSFETs K1 Temperature K1 Silicon K1 Industrial electronics K1 Semiconductor device manufacture K1 Electronics industry K1 Manufacturing industries K1 Low power electronics K1 Buildings K1 Single electron transistors SP 175,176 LK http://dx.doi.org/https://doi.org/10.1109/ISDRS.2005.1596039 DO https://doi.org/10.1109/ISDRS.2005.1596039 SF ELIB - SuUB Bremen
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