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Microwave noise characteristics of AlGaN/GaN HEMTs on high-..:
, In:
2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks
,
Liu, Z.H.
;
Arulkumaran, S.
;
Ng, G.I.
... - p. 127,128,129,130 , 2005
Link:
https://doi.org/10.1109/RFIT.2005.1598891
RT T1 <cTitle>2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks</cTitle>: T1 <Title>Microwave noise characteristics of AlGaN/GaN HEMTs on high-resistivity silicon substrate</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-1598891&Exemplar=1&LAN=DE A1 Liu, Z.H. A1 Arulkumaran, S. A1 Ng, G.I. A1 Cheong, W.C. A1 Zeng, R. A1 Bu, J. A1 Wang, H. A1 Radhakrishnan, K. A1 Tan, C.H. YR 2005 K1 Aluminum gallium nitride K1 Gallium nitride K1 HEMTs K1 MODFETs K1 Silicon K1 Cutoff frequency K1 Noise figure K1 Noise measurement K1 Costs K1 Low-noise amplifiers K1 High-electron-mobility transistors K1 microwave measurements K1 Microwave power amplifiers K1 semiconductor device fabrication K1 semiconductor device noise SP 127,128,129,130 LK http://dx.doi.org/https://doi.org/10.1109/RFIT.2005.1598891 DO https://doi.org/10.1109/RFIT.2005.1598891 SF ELIB - SuUB Bremen
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