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1 Ergebnisse
1
An advanced low power, high performance, strained channel 6..:
, In:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
,
Tyagi, S.
;
Kenyon, C.
;
Lee, S.-H.
... - p. 245-247 , 2005
Link:
https://doi.org/10.1109/IEDM.2005.1609318
RT T1 <cTitle>IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.</cTitle>: T1 <Title>An advanced low power, high performance, strained channel 65nm technology</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-1609318&Exemplar=1&LAN=DE A1 Tyagi, S. A1 Kenyon, C. A1 Lee, S.-H. A1 Lindert, N. A1 Liu, M. A1 Nagisetty, R. A1 Natarajan, S. A1 Parker, C. A1 Sebastian, J. A1 Sell, B. A1 Sivakumar, S. A1 Auth, C. A1 St Amour, A. A1 Tone, K. A1 Bai, P. A1 Curello, G. A1 Deshpande, H. A1 Gannavaram, S. A1 Golonzka, O. A1 Heussner, R. A1 James, R. YR 2005 SN 0163-1918 SN 2156-017X K1 Transistors K1 Capacitive sensors K1 MOS devices K1 CMOS technology K1 Annealing K1 Implants K1 Manufacturing industries K1 Dielectrics K1 Silicon K1 MOSFETs SP 245 OP 247 LK http://dx.doi.org/https://doi.org/10.1109/IEDM.2005.1609318 DO https://doi.org/10.1109/IEDM.2005.1609318 SF ELIB - SuUB Bremen
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