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A novel capacitor-less DRAM cell using thin capacitively-co..:
, In:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
,
Cho, Hyun-Jin
;
Hayes, Dennis
;
Mittal, Anurag
... - p. 311-314 , 2005
Link:
https://doi.org/10.1109/IEDM.2005.1609337
RT T1 <cTitle>IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.</cTitle>: T1 <Title>A novel capacitor-less DRAM cell using thin capacitively-coupled thyristor (TCCT)</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-1609337&Exemplar=1&LAN=DE A1 Cho, Hyun-Jin A1 Hayes, Dennis A1 Mittal, Anurag A1 Robins, Scottt A1 Nemati, Farid A1 Roy, Rich A1 Gupta, Rajesh A1 Yang, Kevin A1 Ershov, Maxim A1 Banna, Srinivasa A1 Tarabbia, Marc A1 Salling, Craig YR 2005 SN 0163-1918 SN 2156-017X K1 Random access memory K1 Thyristors K1 Cathodes K1 Anodes K1 MOSFET circuits K1 CMOS technology K1 Read-write memory K1 Logic K1 Solids K1 Manufacturing SP 311 OP 314 LK http://dx.doi.org/https://doi.org/10.1109/IEDM.2005.1609337 DO https://doi.org/10.1109/IEDM.2005.1609337 SF ELIB - SuUB Bremen
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