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1 Ergebnisse
1
Local-damascene-finFET DRAM integration with p/sup +/ doped..:
, In:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
,
Kim, Yong-Sung
;
Lee, Eun-Cheol
;
Song, Bo-Young
... - p. 315-318 , 2005
Link:
https://doi.org/10.1109/IEDM.2005.1609338
RT T1 <cTitle>IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.</cTitle>: T1 <Title>Local-damascene-finFET DRAM integration with p/sup +/ doped poly-silicon gate technology for sub-60nm device generations</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-1609338&Exemplar=1&LAN=DE A1 Kim, Yong-Sung A1 Lee, Eun-Cheol A1 Song, Bo-Young A1 Lee, Dong-Jun A1 Bae, Dong-Il A1 Yang, Won-Suk A1 Park, Yang-Keun A1 Lee, Kyu-Hyun A1 Roh, Byung-Hyuk A1 Chung, Tae-Young A1 Kim, Kinam A1 Lee, Sang-Hyeon A1 Lee, Wonshik A1 Shin, Soo-Ho A1 Han, Sung-Hee A1 Lee, Ju-Yong A1 Lee, Jin-Woo A1 Han, Jun A1 Yang, Seung-Chul A1 Sung, Joon-Ho YR 2005 SN 0163-1918 SN 2156-017X K1 Random access memory K1 FinFETs K1 Threshold voltage K1 Doping K1 Transistors K1 Leakage current K1 Etching K1 Voltage control K1 Boron K1 Low voltage SP 315 OP 318 LK http://dx.doi.org/https://doi.org/10.1109/IEDM.2005.1609338 DO https://doi.org/10.1109/IEDM.2005.1609338 SF ELIB - SuUB Bremen
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