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Fabrication of 3D trench PZT capacitors for 256Mbit FRAM de..:
, In:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
,
June-Mo Koo
;
Ji-Eun Lim
;
Dong-Chul Yoo
... - p. 4 pp. , 2005
Link:
https://doi.org/10.1109/IEDM.2005.1609345
RT T1 <cTitle>IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.</cTitle>: T1 <Title>Fabrication of 3D trench PZT capacitors for 256Mbit FRAM device application</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-1609345&Exemplar=1&LAN=DE A1 June-Mo Koo A1 Ji-Eun Lim A1 Dong-Chul Yoo A1 Soon-Oh Park A1 Hee-Suk Kim A1 Hee Han A1 Sunggi Baik A1 Jae-Young Choi A1 Yong Jun Park A1 Youngsoo Park A1 Bum-Seok Seo A1 Sukpil Kim A1 Sangmin Shin A1 Jung-Hyun Lee A1 Hionsuck Baik A1 Jang-Ho Lee A1 Jun Ho Lee A1 Byoung-Jae Bae YR 2005 SN 0163-1918 SN 2156-017X K1 Fabrication K1 Capacitors K1 Random access memory K1 Ferroelectric films K1 Nonvolatile memory K1 Polarization K1 Materials science and technology K1 Laboratories K1 MOCVD K1 Ferroelectric materials SP 4 pp. LK http://dx.doi.org/https://doi.org/10.1109/IEDM.2005.1609345 DO https://doi.org/10.1109/IEDM.2005.1609345 SF ELIB - SuUB Bremen
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