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TiN/HfSiOx Gate Stack Multi-Channel Field Effect Transistor..:

, In: 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.,

Kim, Sung Min ; Yoon, Eun Jung ; Kim, Min Sang... - p. 72-73 , 2006

Link: https://doi.org/10.1109/VLSIT.2006.1705222

RT 
T1 <cTitle>2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.</cTitle>: T1 <Title>TiN/HfSiOx Gate Stack Multi-Channel Field Effect Transistor (McFET) for Sub 55nm SRAM Application</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-1705222&Exemplar=1&LAN=DE
				
A1 Kim, Sung Min
A1 Yoon, Eun Jung
A1 Kim, Min Sang
A1 Suk, Sung Dae
A1 Li, Ming
A1 Jun, Lian
A1 Oh, Chang Woo
A1 Yeo, Kyoung Hwan
A1 Kim, Sung Hwan
A1 Lee, Sung Young
A1 Choi, Yong Lack
A1 Kim, Na-young
A1 Yeoh, Yun-young
A1 Park, Hong-Bae
A1 Kim, Chul Sung
A1 Kim, Hye-Min
A1 Kim, Dong-Chan
A1 Park, Heung Sik
A1 Kim, Hyung Do
A1 Lee, Young Mi
A1 Kim, Dong-Won
A1 Park, Donggun
A1 Ryu, Byung-Il
YR 2006
SN 0743-1562
SN 2158-9682
K1 Tin
K1 FETs
K1 Random access memory
K1 High-K gate dielectrics
K1 Electrodes
K1 High K dielectric materials
K1 Leakage current
K1 CMOS technology
K1 Transistors
K1 Fabrication
SP 72
OP 73
LK http://dx.doi.org/https://doi.org/10.1109/VLSIT.2006.1705222
DO https://doi.org/10.1109/VLSIT.2006.1705222
SF ELIB - SuUB Bremen

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