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Demonstration of a New Approach Towards 0.25V Low-Vt CMOS U..:
, In:
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.
,
Biesemans, S.
;
Absil, P.P.
;
Jurczak, M.
... - p. 98-99 , 2006
Link:
https://doi.org/10.1109/VLSIT.2006.1705235
RT T1
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.
: T1
Demonstration of a New Approach Towards 0.25V Low-Vt CMOS Using Ni-Based FUSI
UL https://suche.suub.uni-bremen.de/peid=ieee-1705235&Exemplar=1&LAN=DE A1 Biesemans, S. A1 Absil, P.P. A1 Jurczak, M. A1 Chen, J.D. A1 Li, M.F. A1 Meyer, K.De. A1 van Dal, M. A1 Froment, B. A1 Rothchild, A. A1 Demand, M. A1 Verbeeck, R. A1 Onsia, B. A1 Mertens, S. A1 Hoffmann, T. A1 Vrancken, C. A1 Brus, S. A1 Veloso, A. A1 Augendre, E. A1 Kubicek, S. A1 Demeurisse, C. A1 Singanamalla, R. A1 Lauwers, A. A1 Kittl, J.A. A1 Yu, H.Y. YR 2006 SN 0743-1562 SN 2158-9682 K1 Silicon germanium K1 Germanium silicon alloys K1 Dielectrics K1 MOSFETs K1 Ion implantation K1 Aluminum alloys K1 Germanium alloys K1 Platinum alloys K1 Instruments K1 Alloying SP 98 OP 99 LK http://dx.doi.org/https://doi.org/10.1109/VLSIT.2006.1705235 DO https://doi.org/10.1109/VLSIT.2006.1705235 SF ELIB - SuUB Bremen
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