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Highly Reliable 256Mb PRAM with Advanced Ring Contact Techn..:

, In: 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.,

Song, Y.J. ; Kong, J. ; Ahn, S.... - p. 118-119 , 2006

Link: https://doi.org/10.1109/VLSIT.2006.1705245

RT 
T1 <cTitle>2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.</cTitle>: T1 <Title>Highly Reliable 256Mb PRAM with Advanced Ring Contact Technology and Novel Encapsulating Technology</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-1705245&Exemplar=1&LAN=DE
				
A1 Song, Y.J.
A1 Kong, J.
A1 Ahn, S.
A1 Lee, S.H.
A1 Park, J.H.
A1 Oh, J.H.
A1 Oh, Y.T.
A1 Kim, J.S.
A1 Shin, J.
A1 Park, J.
A1 Fai, Y.
A1 Ryoo, K.C
A1 Koh, G.
A1 Jeong, G.T.
A1 Kim, R.H.
A1 Lim, H.S.
A1 Park, I.S.
A1 Jeong, H.S.
A1 Jeong, H.
A1 Kim, K.
A1 Hwang, Y.N.
A1 Jeong, C.W.
A1 Lim, D.W.
A1 Park, S.S.
A1 Kim, J.I.
A1 Kim, J.H.
A1 Lee, S.Y.
YR 2006
SN 0743-1562
SN 2158-9682
K1 Phase change random access memory
K1 Dielectrics
K1 Degradation
K1 Tellurium
K1 Electrodes
K1 CMOS technology
K1 Planarization
K1 Cleaning
K1 Research and development
K1 Manufacturing processes
SP 118
OP 119
LK http://dx.doi.org/https://doi.org/10.1109/VLSIT.2006.1705245
DO https://doi.org/10.1109/VLSIT.2006.1705245
SF ELIB - SuUB Bremen

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