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High-Performance Low Operation Power Transistor for 45nm No..:

, In: 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.,

Sugii, T. ; Aoyama, T. ; Tamura, N.... - p. 156-157 , 2006

Link: https://doi.org/10.1109/VLSIT.2006.1705264

RT 
T1 <cTitle>2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.</cTitle>: T1 <Title>High-Performance Low Operation Power Transistor for 45nm Node Universal Applications</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-1705264&Exemplar=1&LAN=DE
				
A1 Sugii, T.
A1 Aoyama, T.
A1 Tamura, N.
A1 Fukutome, H.
A1 Miyashita, T.
A1 Sakuma, T.
A1 Ota, H.
A1 Katakami, A.
A1 Shimamune, Y.
A1 Hatada, A.
A1 Minakata, H.
A1 Hashimoto, K.
A1 Hayami, Y.
A1 Mori, T.
A1 Okoshi, K.
A1 Isome, T.
A1 Watanabe, T.
A1 Morioka, H.
A1 Kokura, H.
A1 Ogura, J.
A1 Sugimoto, K.
A1 Owada, T.
A1 Miyajima, M.
A1 Okuno, M.
A1 Pidin, S.
A1 Kawamura, K.
A1 Sakoda, T.
A1 Yamaguchi, A.
A1 Okabe, K.
A1 Shima, M.
A1 Sato, S.
A1 Kojima, M.
A1 Nakai, S.
A1 Fukuyama, S.
A1 Nakaishi, M.
A1 Sukegawa, K.
YR 2006
SN 0743-1562
SN 2158-9682
K1 Power transistors
K1 Capacitive sensors
K1 Leakage current
K1 MOS devices
K1 Tensile stress
K1 DSL
K1 Charge carrier processes
K1 Electron mobility
K1 Compressive stress
K1 Laboratories
SP 156
OP 157
LK http://dx.doi.org/https://doi.org/10.1109/VLSIT.2006.1705264
DO https://doi.org/10.1109/VLSIT.2006.1705264
SF ELIB - SuUB Bremen

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