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Dual High-k Gate Dielectric Technology Using Selective AlOx..:
, In:
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.
,
Jung, H.-S.
;
Chung, Y.
;
Kim, S.
... - p. 162-163 , 2006
Link:
https://doi.org/10.1109/VLSIT.2006.1705267
RT T1
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.
: T1
Dual High-k Gate Dielectric Technology Using Selective AlOx Etch (SAE) Process with Nitrogen and Fluorine Incorporation
UL https://suche.suub.uni-bremen.de/peid=ieee-1705267&Exemplar=1&LAN=DE A1 Jung, H.-S. A1 Chung, Y. A1 Kim, S. A1 Baik, H. A1 Lee, J.-H. A1 Lee, N.-I. A1 Kang, H.-K. A1 Han, S. A1 Lim, H. A1 Kim, Y.-S. A1 Kim, Min Joo A1 Yu, M. A1 Lee, C.-K. A1 Lee, Mong sub A1 You, Y.-S. YR 2006 SN 0743-1562 SN 2158-9682 K1 Etching K1 Nitrogen K1 MOS devices K1 Impurities K1 Hafnium oxide K1 High K dielectric materials K1 High-K gate dielectrics K1 Counting circuits K1 Doping K1 Voltage SP 162 OP 163 LK http://dx.doi.org/https://doi.org/10.1109/VLSIT.2006.1705267 DO https://doi.org/10.1109/VLSIT.2006.1705267 SF ELIB - SuUB Bremen
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