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1
Post-stress interface trap generation: a new hot-carrier in..:
, In:
30th Annual Proceedings Reliability Physics 1992
,
de Schrijver, E.
;
Heremans, P.
;
Bellens, R.
.. - p. 112,113,114,115 , 1992
Link:
https://doi.org/10.1109/RELPHY.1992.187633
RT T1
30th Annual Proceedings Reliability Physics 1992
: T1
Post-stress interface trap generation: a new hot-carrier induced degradation phenomenon in passivated n-channel MOSFET's
UL https://suche.suub.uni-bremen.de/peid=ieee-187633&Exemplar=1&LAN=DE A1 de Schrijver, E. A1 Heremans, P. A1 Bellens, R. A1 Groeseneken, G. A1 Maes, H.E. YR 1992 K1 Hot carriers K1 Degradation K1 Stress K1 MOSFETs K1 Hydrogen K1 Charge pumps K1 Acceleration K1 Hot carrier injection K1 Life estimation K1 Lifetime estimation SP 112,113,114,115 LK http://dx.doi.org/https://doi.org/10.1109/RELPHY.1992.187633 DO https://doi.org/10.1109/RELPHY.1992.187633 SF ELIB - SuUB Bremen
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