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1 Ergebnisse
1
High characteristic temperature 1.48 /spl mu/m strained-lay..:
, In:
Proceedings of IEEE International Electron Devices Meeting
,
Fujihara, K.
;
Mori, Y.
;
Kito, M.
... - p. 605,606,607,608 , 1993
Link:
https://doi.org/10.1109/IEDM.1993.347286
RT T1
Proceedings of IEEE International Electron Devices Meeting
: T1
High characteristic temperature 1.48 /spl mu/m strained-layer MQW laser diode with wide bandgap barrier layers
UL https://suche.suub.uni-bremen.de/peid=ieee-347286&Exemplar=1&LAN=DE A1 Fujihara, K. A1 Mori, Y. A1 Kito, M. A1 Otsuka, N. A1 Ishino, M. A1 Matsui, Y. YR 1993 SN 0163-1918 K1 Temperature K1 Quantum well devices K1 Diode lasers K1 Photonic band gap K1 Pulse measurements K1 Carrier confinement K1 Optical waveguides K1 Optical control K1 Charge carrier density K1 Power generation SP 605,606,607,608 LK http://dx.doi.org/https://doi.org/10.1109/IEDM.1993.347286 DO https://doi.org/10.1109/IEDM.1993.347286 SF ELIB - SuUB Bremen
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