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1
Study of Design Factors Affecting Turn-on Time of Silicon C..:
, In:
2006 IEEE International Reliability Physics Symposium Proceedings
,
Di Sarro, James
;
Chatty, Kiran
;
Gauthier, Robert
. - p. None , 2006
Link:
https://doi.org/10.1109/RELPHY.2006.251210
RT T1
2006 IEEE International Reliability Physics Symposium Proceedings
: T1
Study of Design Factors Affecting Turn-on Time of Silicon Controlled Rectifiers (SCRS) in 90 and 65nm Bulk CMOS Technologies
UL https://suche.suub.uni-bremen.de/peid=ieee-4017151&Exemplar=1&LAN=DE A1 Di Sarro, James A1 Chatty, Kiran A1 Gauthier, Robert A1 Rosenbaum, Elyse YR 2006 SN 1541-7026 SN 1938-1891 K1 Thyristors K1 CMOS technology K1 Electrostatic discharge K1 Diodes K1 Protection K1 Anodes K1 Circuit testing K1 Cathodes K1 Voltage K1 Trigger circuits K1 Electrostatic discharge (ESD) K1 Silicon Controlled Rectifier (SCR) K1 ESD protection circuits SP None LK http://dx.doi.org/https://doi.org/10.1109/RELPHY.2006.251210 DO https://doi.org/10.1109/RELPHY.2006.251210 SF ELIB - SuUB Bremen
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