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A Novel Isolation Scheme featuring Cavities in the Collecto..:

, In: 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems,

Choi, L.J. ; Leray, P. ; Vleugels, F.... - p. None , 2007

Link: https://doi.org/10.1109/SMIC.2007.322805

RT 
T1 <cTitle>2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems</cTitle>: T1 <Title>A Novel Isolation Scheme featuring Cavities in the Collector for a High-Speed 0.13μm SiGe:C BiCMOS Technology</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-4117350&Exemplar=1&LAN=DE
				
A1 Choi, L.J.
A1 Leray, P.
A1 Vleugels, F.
A1 Venegas, R.
A1 Hijzen, E.
A1 Decoutere, S.
A1 Van Huylenbroeck, S.
A1 Donkers, J.
A1 van Noort, W.D.
A1 Piontek, A.
A1 Sibaja-Hernandez, A.
A1 Meunier-Beillard, P.
A1 Neuilly, F.
A1 Kunnen, E.
YR 2007
K1 BiCMOS integrated circuits
K1 Isolation technology
K1 Germanium silicon alloys
K1 Silicon germanium
K1 Etching
K1 Radio frequency
K1 Heterojunction bipolar transistors
K1 Capacitance
K1 Microelectronics
K1 Continuous improvement
K1 Heterojunction bipolar transistor (HBT)
K1 Silicon-Germanium (SiGe)
K1 BiCMOS Technology
SP None
LK http://dx.doi.org/https://doi.org/10.1109/SMIC.2007.322805
DO https://doi.org/10.1109/SMIC.2007.322805
SF ELIB - SuUB Bremen

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