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A New Twin Flash™ Cell for 2 and 4 Bit Operation at 63nm Fe..:

, In: 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),

Nagel, N. ; Boubekeur, H. ; Heinrichsdorff, F.... - p. None , 2007

Link: https://doi.org/10.1109/VTSA.2007.378933

RT 
T1 <cTitle>2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)</cTitle>: T1 <Title>A New Twin Flash™ Cell for 2 and 4 Bit Operation at 63nm Feature Size</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-4239501&Exemplar=1&LAN=DE
				
A1 Nagel, N.
A1 Boubekeur, H.
A1 Heinrichsdorff, F.
A1 Bach, L.
A1 Polei, V.
A1 Gupta, J.
A1 Pritchard, D.
A1 Riedel, S.
A1 Strassburg, M.
A1 Deppe, J.
A1 Bewersdorff-Sarlette, U.
A1 Muller, T.
A1 Verhoeven, M.
A1 Lattard, L.
A1 Markert, M.
A1 Ruttkowski, E.
A1 Mikalo, R.
A1 Willer, J.
A1 Schulze, N.
A1 Ludwig, C.
A1 v. Kamienski, E.G. Stein
A1 Mikolajick, T.
A1 Isler, M.
A1 Kusters, K.-H.
A1 Shappir, A.
A1 Shur, Y.
A1 Lusky, E.
A1 Eitan, B.
A1 Pissors, V.
A1 Sachse, J.-U.
A1 Manger, D.
A1 Caspary, D.
A1 Parascandola, S.
A1 Olligs, D.
YR 2007
SN 1524-766X
K1 Channel hot electron injection
K1 Voltage
K1 Flash memory cells
K1 Electric variables
K1 Electron traps
K1 Silicon compounds
K1 Hot carriers
K1 Tunneling
K1 Isolation technology
K1 Maintenance engineering
SP None
LK http://dx.doi.org/https://doi.org/10.1109/VTSA.2007.378933
DO https://doi.org/10.1109/VTSA.2007.378933
SF ELIB - SuUB Bremen

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