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Amorphization and Templated Recrystallization (ATR) Study f..:

, In: 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),

Huang, Yao-Tsung ; Pinto, Angelo ; Lin, Chien-Ting... - p. None , 2007

Link: https://doi.org/10.1109/VTSA.2007.378957

RT 
T1 <cTitle>2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)</cTitle>: T1 <Title>Amorphization and Templated Recrystallization (ATR) Study for Hybrid Orientation Technology (HOT) using Direct Silicon Bond (DSB) Substrates</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-4239525&Exemplar=1&LAN=DE
				
A1 Huang, Yao-Tsung
A1 Pinto, Angelo
A1 Lin, Chien-Ting
A1 Hsu, Che-Hua
A1 Ramin, Manfred
A1 Seacrist, Mike
A1 Ries, Mike
A1 Matthews, Kenneth
A1 Nguyen, Billy
A1 Freeman, Melissa
A1 Wilks, Bruce
A1 Stager, Chuck
A1 Johnson, Charlene
A1 Denning, Laurie
A1 Bennett, Joe
A1 Pilot, John
A1 Joshi, Sachin
A1 Lee, Tung-Hsing
A1 Ma, Mike
A1 Cheng, Osbert
A1 Wise, Rick
YR 2007
SN 1524-766X
K1 MOSFETs
K1 Silicon on insulator technology
K1 Surface morphology
K1 CMOS technology
K1 Substrates
K1 Crystalline materials
K1 Wafer bonding
K1 Ring oscillators
K1 Thyristors
K1 Diodes
SP None
LK http://dx.doi.org/https://doi.org/10.1109/VTSA.2007.378957
DO https://doi.org/10.1109/VTSA.2007.378957
SF ELIB - SuUB Bremen

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