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1 Ergebnisse
1
New Explicit Charge and Capacitance Models for Undoped Surr..:
, In:
2007 Spanish Conference on Electron Devices
,
Moldovan, Oana
;
Iniguez, Benjamin
;
Jimenez, David
. - p. None , 2007
Link:
https://doi.org/10.1109/SCED.2007.384009
RT T1
2007 Spanish Conference on Electron Devices
: T1
New Explicit Charge and Capacitance Models for Undoped Surrounding Gate MOSFETs
UL https://suche.suub.uni-bremen.de/peid=ieee-4271184&Exemplar=1&LAN=DE A1 Moldovan, Oana A1 Iniguez, Benjamin A1 Jimenez, David A1 Roig, Jaume YR 2007 SN 2163-4971 K1 Capacitance K1 MOSFETs K1 Integrated circuit modeling K1 Semiconductor device modeling K1 Poisson equations K1 Circuit simulation K1 Silicon K1 Electrostatics K1 Numerical simulation K1 CMOS technology K1 compact device modelling K1 intrinsic capacitances K1 Surrounding Gate MOSFET SP None LK http://dx.doi.org/https://doi.org/10.1109/SCED.2007.384009 DO https://doi.org/10.1109/SCED.2007.384009 SF ELIB - SuUB Bremen
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