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1 Ergebnisse
1
Novel Heat Dissipating Cell Scheme for Improving a Reset Di..:
, In:
2007 IEEE Symposium on VLSI Technology
,
Kang, D.H.
;
Yu, J.
;
Kong, J.H.
... - p. None , 2007
Link:
https://doi.org/10.1109/VLSIT.2007.4339741
RT T1
2007 IEEE Symposium on VLSI Technology
: T1
Novel Heat Dissipating Cell Scheme for Improving a Reset Distribution in a 512M Phase-change Random Access Memory (PRAM)
UL https://suche.suub.uni-bremen.de/peid=ieee-4339741&Exemplar=1&LAN=DE A1 Kang, D.H. A1 Yu, J. A1 Kong, J.H. A1 Ha, D.W. A1 Song, S.A. A1 Park, J. A1 Park, Y.H. A1 Song, Y.J. A1 Eum, C.Y. A1 Ryoo, K.C. A1 Shin, J.M. A1 Kim, J.S. A1 Lim, D.W. A1 Park, S.S. A1 Kim, J.H. A1 Park, W.I. A1 Sim, K.R. A1 Cheong, J.H. A1 Oh, J.H. A1 Kim, J.I. A1 Oh, Y.T. A1 Lee, K.W. A1 Kim, Y.R. A1 Koh, S.P. A1 Eun, S.H. A1 Kim, N.B. A1 Koh, G.H. A1 Jeong, G.T. A1 Jeong, H.S. A1 Kim, Kinam A1 Kim, Y.T. A1 Lee, M.K. A1 Jun, Y.J. A1 Park, J.H. A1 Yeung, F. A1 Jeong, C.W. YR 2007 SN 0743-1562 SN 2158-9682 K1 Phase change random access memory K1 Crystallization K1 Degradation K1 Amorphous materials K1 Writing K1 Resistance heating K1 Temperature K1 Phase change materials K1 Switches K1 Cooling SP None LK http://dx.doi.org/https://doi.org/10.1109/VLSIT.2007.4339741 DO https://doi.org/10.1109/VLSIT.2007.4339741 SF ELIB - SuUB Bremen
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