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1 Ergebnisse
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Addressing Key Concerns for Implementation of Ni FUSI into ..:
, In:
2007 IEEE Symposium on VLSI Technology
,
Shickova, A.
;
Lauwers, A.
;
Zahid, M.
... - p. None , 2007
Link:
https://doi.org/10.1109/VLSIT.2007.4339765
RT T1
2007 IEEE Symposium on VLSI Technology
: T1
Addressing Key Concerns for Implementation of Ni FUSI into Manufacturing for 45/32 nm CMOS
UL https://suche.suub.uni-bremen.de/peid=ieee-4339765&Exemplar=1&LAN=DE A1 Shickova, A. A1 Lauwers, A. A1 Zahid, M. A1 Rost, T. A1 Tigelaar, H. A1 Pas, M. A1 Fretwell, J. A1 McCormack, J. A1 Hoffmann, T. A1 Kerner, C. A1 Chiarella, T. A1 Kauerauf, T. A1 Brus, S. A1 Harada, Y. A1 Niwa, M. A1 Kaushik, V. A1 Maes, H. A1 Absil, P. P. A1 Groeseneken, G. A1 Biesemans, S. A1 Kittl, J. A. A1 Rothschild, A. A1 Aoulaiche, M. A1 Sahhaf, S. A1 Kaczer, B. A1 Veloso, A. A1 Torregiani, C. A1 Pantisano, L. YR 2007 SN 0743-1562 SN 2158-9682 K1 Manufacturing K1 Niobium compounds K1 Titanium compounds K1 Silicidation K1 MOS devices K1 Scalability K1 Channel bank filters K1 Silicides K1 Etching K1 Stress SP None LK http://dx.doi.org/https://doi.org/10.1109/VLSIT.2007.4339765 DO https://doi.org/10.1109/VLSIT.2007.4339765 SF ELIB - SuUB Bremen
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