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1 Ergebnisse
1
A NAND-type Flash Memory Using Impact Ionization Generated ..:
, In:
2007 IEEE International Electron Devices Meeting
,
Wu, Jau-Yi
;
Kuo, Ming-Chang
;
Hsu, Tzu-Hsuan
... - p. None , 2007
Link:
https://doi.org/10.1109/IEDM.2007.4418870
RT T1
2007 IEEE International Electron Devices Meeting
: T1
A NAND-type Flash Memory Using Impact Ionization Generated Substrate Hot Electron Programming (≫20MB/sec) and Hot Hole Erasing
UL https://suche.suub.uni-bremen.de/peid=ieee-4418870&Exemplar=1&LAN=DE A1 Wu, Jau-Yi A1 Kuo, Ming-Chang A1 Hsu, Tzu-Hsuan A1 Chen, Kuan-Fu A1 Chen, Yin-Jen A1 Lai, Erh-Kun A1 Lee, Ming-Hsiu A1 Hsieh, Kuang-Yeu A1 Liu, Rich A1 Lu, Chih-Yuan YR 2007 SN 0163-1918 SN 2156-017X K1 Flash memory K1 Impact ionization K1 Charge carrier processes K1 Hot carriers K1 Voltage K1 Electron traps K1 Temperature K1 Nonvolatile memory K1 Electronic mail K1 Tunneling SP None LK http://dx.doi.org/https://doi.org/10.1109/IEDM.2007.4418870 DO https://doi.org/10.1109/IEDM.2007.4418870 SF ELIB - SuUB Bremen
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