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SiGe BiCMOS Technology with 3.0 ps Gate Delay:

, In: 2007 IEEE International Electron Devices Meeting,

Rucker, H. ; Fursenko, O. ; Grabolla, T.... - p. None , 2007

Link: https://doi.org/10.1109/IEDM.2007.4419028

RT 
T1 <cTitle>2007 IEEE International Electron Devices Meeting</cTitle>: T1 <Title>SiGe BiCMOS Technology with 3.0 ps Gate Delay</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-4419028&Exemplar=1&LAN=DE
				
A1 Rucker, H.
A1 Fursenko, O.
A1 Grabolla, T.
A1 Haak, U.
A1 Hoppner, W.
A1 Knoll, D.
A1 Kopke, K.
A1 Kuck, B.
A1 Mai, A.
A1 Marschmeyer, S.
A1 Morgenstern, T.
A1 Heinemann, B.
A1 Richter, H. H.
A1 Schley, P.
A1 Schmidt, D.
A1 Schulz, K.
A1 Tillack, B.
A1 Weidner, G.
A1 Winkler, W.
A1 Wolansky, D.
A1 Wulf, H.-E.
A1 Yamamototo, Y.
A1 Barth, R.
A1 Bauer, J.
A1 Blum, K.
A1 Bolze, D.
A1 Drews, J.
A1 Fischer, G. G.
A1 Fox, A.
YR 2007
SN 0163-1918
SN 2156-017X
K1 Silicon germanium
K1 Germanium silicon alloys
K1 BiCMOS integrated circuits
K1 Delay
K1 Heterojunction bipolar transistors
K1 Frequency
K1 CMOS technology
K1 Millimeter wave technology
K1 CMOS process
K1 Ring oscillators
SP None
LK http://dx.doi.org/https://doi.org/10.1109/IEDM.2007.4419028
DO https://doi.org/10.1109/IEDM.2007.4419028
SF ELIB - SuUB Bremen

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