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1 Ergebnisse
1
A new impact ionization current model applicable to both bu..:
, In:
2007 International Semiconductor Device Research Symposium
,
Wei, Chengqing
;
Zhou, Xing
;
See, Guan Huei
- p. None , 2007
Link:
https://doi.org/10.1109/ISDRS.2007.4422304
RT T1
2007 International Semiconductor Device Research Symposium
: T1
A new impact ionization current model applicable to both bulk and SOI MOSFETs by considering self-lattice-heating
UL https://suche.suub.uni-bremen.de/peid=ieee-4422304&Exemplar=1&LAN=DE A1 Wei, Chengqing A1 Zhou, Xing A1 See, Guan Huei YR 2007 K1 Impact ionization K1 MOSFETs K1 Temperature K1 Lattices K1 Semiconductor device modeling K1 Equations K1 Electrons K1 Tellurium K1 Educational institutions K1 Heating SP None LK http://dx.doi.org/https://doi.org/10.1109/ISDRS.2007.4422304 DO https://doi.org/10.1109/ISDRS.2007.4422304 SF ELIB - SuUB Bremen
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