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1 Ergebnisse
1
A floating RESURF EDMOS with enhanced safe operating area:
, In:
2007 International Workshop on Physics of Semiconductor Devices
,
Hao Wang
;
Yoo, Abraham
;
Xu, H. P. Edward
... - p. None , 2007
Link:
https://doi.org/10.1109/IWPSD.2007.4472628
RT T1
2007 International Workshop on Physics of Semiconductor Devices
: T1
A floating RESURF EDMOS with enhanced safe operating area
UL https://suche.suub.uni-bremen.de/peid=ieee-4472628&Exemplar=1&LAN=DE A1 Hao Wang A1 Yoo, Abraham A1 Xu, H. P. Edward A1 Wai Tung Ng A1 Kenji Fukumoto A1 Akira Ishikawa A1 Hisaya Imai A1 Kimio Sakai A1 Kaoru Takasuka YR 2007 K1 Semiconductor optical amplifiers K1 Bipolar transistors K1 Driver circuits K1 Voltage K1 Electric breakdown K1 Turning K1 Electrons K1 Impact ionization K1 Helium K1 MOSFETs K1 EDMOS K1 Safe Operation Area (SOA) K1 floating RESURF K1 parasitic bipolar transistor SP None LK http://dx.doi.org/https://doi.org/10.1109/IWPSD.2007.4472628 DO https://doi.org/10.1109/IWPSD.2007.4472628 SF ELIB - SuUB Bremen
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