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High-performance nMOSFET with in-situ phosphorus-doped embe..:

, In: 2008 IEEE International Electron Devices Meeting,

Yang, B. Frank ; Takalkar, R. ; Ren, Z.... - p. None , 2008

Link: https://doi.org/10.1109/IEDM.2008.4796611

RT 
T1 <cTitle>2008 IEEE International Electron Devices Meeting</cTitle>: T1 <Title>High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-4796611&Exemplar=1&LAN=DE
				
A1 Yang, B. Frank
A1 Takalkar, R.
A1 Ren, Z.
A1 Black, L.
A1 Dube, A.
A1 Weijtmans, J.W.
A1 Li, J.
A1 Johnson, J.B.
A1 Faltermeier, J.
A1 Madan, A.
A1 Zhu, Z.
A1 Turansky, A.
A1 Xia, G.
A1 Chakravarti, A.
A1 Pal, R.
A1 Chan, K.
A1 Reznicek, A.
A1 Adam, T.N.
A1 Yang, B.
A1 de Souza, J.P.
A1 Harley, E.C.T.
A1 Greene, B.
A1 Gehring, A.
A1 Cai, M.
A1 Aime, D.
A1 Sun, S.
A1 Meer, H.
A1 Holt, J.
A1 Theodore, D.
A1 Zollner, S.
A1 Grudowski, P.
A1 Sadana, D.
A1 Park, D.-G.
A1 Mocuta, D.
A1 Schepis, D.
A1 Maciejewski, E.
A1 Luning, S.
A1 Pellerin, J.
A1 Leobandung, E.
YR 2008
SN 0163-1918
SN 2156-017X
K1 MOSFET circuits
SP None
LK http://dx.doi.org/https://doi.org/10.1109/IEDM.2008.4796611
DO https://doi.org/10.1109/IEDM.2008.4796611
SF ELIB - SuUB Bremen

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