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1 Ergebnisse
1
Approaching fermi level unpinning in Oxide-In0.2Ga0.8As:
, In:
2008 IEEE International Electron Devices Meeting
,
Chiang, T. H.
;
Lee, W.C.
;
Lin, T.D.
... - p. None , 2008
Link:
https://doi.org/10.1109/IEDM.2008.4796698
RT T1
2008 IEEE International Electron Devices Meeting
: T1
Approaching fermi level unpinning in Oxide-In0.2Ga0.8As
UL https://suche.suub.uni-bremen.de/peid=ieee-4796698&Exemplar=1&LAN=DE A1 Chiang, T. H. A1 Lee, W.C. A1 Lin, T.D. A1 Lin, D. A1 Shiu, K.H. A1 Kwo, J. A1 Wang, W.E. A1 Tsai, W. A1 Hong, M. YR 2008 SN 0163-1918 SN 2156-017X K1 Capacitance-voltage characteristics K1 III-V semiconductor materials K1 Gallium arsenide K1 Indium gallium arsenide K1 Lighting K1 Capacitance measurement K1 Temperature distribution K1 Passivation K1 Dielectric measurements K1 Aluminum oxide SP None LK http://dx.doi.org/https://doi.org/10.1109/IEDM.2008.4796698 DO https://doi.org/10.1109/IEDM.2008.4796698 SF ELIB - SuUB Bremen
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