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1 Ergebnisse
1
A unified FinFET reliability model including high K gate st..:
, In:
2009 10th International Symposium on Quality Electronic Design
,
Chenyue Ma
;
Bo Li
;
Lining Zhang
... - p. None , 2009
Link:
https://doi.org/10.1109/ISQED.2009.4810262
RT T1 <cTitle>2009 10th International Symposium on Quality Electronic Design</cTitle>: T1 <Title>A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-4810262&Exemplar=1&LAN=DE A1 Chenyue Ma A1 Bo Li A1 Lining Zhang A1 Jin He A1 Xing Zhang A1 Xinnan Lin A1 Chan, Mansun YR 2009 SN 1948-3287 SN 1948-3295 K1 FinFETs K1 High K dielectric materials K1 High-K gate dielectrics K1 Threshold voltage K1 Hot carrier injection K1 Negative bias temperature instability K1 Circuit simulation K1 Human computer interaction K1 Niobium compounds K1 Titanium compounds K1 Model K1 Reliability K1 HKSDT K1 HCI K1 NBTI K1 circuit SP None LK http://dx.doi.org/https://doi.org/10.1109/ISQED.2009.4810262 DO https://doi.org/10.1109/ISQED.2009.4810262 SF ELIB - SuUB Bremen
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