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1 Ergebnisse
1
A VFB tunable Single Metal Single Dielectric approach using..:
, In:
2009 International Symposium on VLSI Technology, Systems, and Applications
,
Petry, J.
;
Boccardi, G.
;
Singanamalla, R.
... - p. None , 2009
Link:
https://doi.org/10.1109/VTSA.2009.5159289
RT T1
2009 International Symposium on VLSI Technology, Systems, and Applications
: T1
A VFB tunable Single Metal Single Dielectric approach using As I/I into TiN/HfO2 for 32nm node and beyond
UL https://suche.suub.uni-bremen.de/peid=ieee-5159289&Exemplar=1&LAN=DE A1 Petry, J. A1 Boccardi, G. A1 Singanamalla, R. A1 Liu, C.S. A1 Xiong, K. A1 Escanes, P. A1 Huguenin, J.-L. A1 Tseng, J. A1 Van Nimwegen, L. A1 Voogt, F. A1 Bulle-Lieuwma, C.W.T. A1 Muller, M. YR 2009 SN 1524-766X K1 Tin K1 Channel bank filters K1 Degradation K1 Dielectrics K1 FETs K1 Hafnium oxide K1 Costs K1 Gate leakage K1 Implants K1 Threshold voltage SP None LK http://dx.doi.org/https://doi.org/10.1109/VTSA.2009.5159289 DO https://doi.org/10.1109/VTSA.2009.5159289 SF ELIB - SuUB Bremen
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