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1 Ergebnisse
1
Sub-100nm high-K metal gate GeOI pMOSFETs performance: Impa..:
, In:
2009 International Symposium on VLSI Technology, Systems, and Applications
,
Le Royer, C.
;
Tabone, C.
;
Previtali, B.
... - p. None , 2009
Link:
https://doi.org/10.1109/VTSA.2009.5159331
RT T1
2009 International Symposium on VLSI Technology, Systems, and Applications
: T1
Sub-100nm high-K metal gate GeOI pMOSFETs performance: Impact of the Ge channel orientation and of the source injection velocity
UL https://suche.suub.uni-bremen.de/peid=ieee-5159331&Exemplar=1&LAN=DE A1 Le Royer, C. A1 Tabone, C. A1 Previtali, B. A1 Truche, R. A1 Allain, F. A1 Pouydebasque, A. A1 Romanjek, K. A1 Barral, V. A1 Vinet, M. A1 Hartmann, J.-M. A1 Augendre, E. A1 Grampeix, H. A1 Lachal, L. YR 2009 SN 1524-766X K1 High K dielectric materials K1 High-K gate dielectrics K1 MOSFETs K1 Implants K1 Substrates K1 Fabrication K1 Electronic mail K1 Germanium K1 Silicon K1 Capacitive sensors SP None LK http://dx.doi.org/https://doi.org/10.1109/VTSA.2009.5159331 DO https://doi.org/10.1109/VTSA.2009.5159331 SF ELIB - SuUB Bremen
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