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1 Ergebnisse
1
Systematic study on bias temperature instability of various..:
, In:
2009 IEEE International Reliability Physics Symposium
,
Jung, Hyung-Suk
;
Park, Tae Joo
;
Kim, Jeong Hwan
... - p. None , 2009
Link:
https://doi.org/10.1109/IRPS.2009.5173392
RT T1 <cTitle>2009 IEEE International Reliability Physics Symposium</cTitle>: T1 <Title>Systematic study on bias temperature instability of various high-k gate dielectrics ; HfO2, HfZrxOy and ZrO2</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-5173392&Exemplar=1&LAN=DE A1 Jung, Hyung-Suk A1 Park, Tae Joo A1 Kim, Jeong Hwan A1 Lee, Sang Young A1 Lee, Joohwi A1 Oh, Him Chan A1 Na, Kwang Duck A1 Park, Jung-Min A1 Kim, Weon-Hong A1 Song, Min-Woo A1 Lee, Nae-In A1 Hwang, Cheol Seong YR 2009 SN 1541-7026 SN 1938-1891 K1 Hafnium oxide K1 MOS devices K1 Zirconium K1 Niobium compounds K1 Titanium compounds K1 Stress K1 Plasma temperature K1 Crystallization K1 Interface states K1 MOSFET circuits SP None LK http://dx.doi.org/https://doi.org/10.1109/IRPS.2009.5173392 DO https://doi.org/10.1109/IRPS.2009.5173392 SF ELIB - SuUB Bremen
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