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Magnetic field induced gate leakage current in 65nm nMOS tr..:

, In: 2009 Proceedings of the European Solid State Device Research Conference,
Gutierrez-D, Edmundo A. ; Molina-R, J. ; Garcia-R., P. J... - p. None , 2009
Link: https://doi.org/10.1109/ESSDERC.2009.5331452