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1 Ergebnisse
1
Trigate 6T SRAM scaling to 0.06 µm2:
, In:
2009 IEEE International Electron Devices Meeting (IEDM)
,
Guillorna, M.
;
Darnon, M.
;
Ott, J.
... - p. None , 2009
Link:
https://doi.org/10.1109/IEDM.2009.5424249
RT T1 <cTitle>2009 IEEE International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>Trigate 6T SRAM scaling to 0.06 µm2</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-5424249&Exemplar=1&LAN=DE A1 Guillorna, M. A1 Darnon, M. A1 Ott, J. A1 Lavoie, C. A1 Frank, M. A1 Gignac, L. A1 Newbury, J. A1 Wang, C. A1 Klaus, D. A1 Kratschmer, E. A1 Bucchignano, J. A1 Chang, J. A1 To, B. A1 Graham, W. A1 Lauer, I. A1 Sikorski, E. A1 Carter, S. A1 Narayanan, V. A1 Fuller, N. A1 Zhang, Y. A1 Haensch, W. A1 Pyzyna, A. A1 Engelmann, S. A1 Joseph, E. A1 Fletcher, B. A1 Cabral, C. A1 Lin, C.-H. A1 Bryant, A. YR 2009 SN 0163-1918 SN 2156-017X K1 Random access memory K1 Electrostatics K1 Silicon compounds K1 Silicides K1 Dielectric devices K1 Optical films K1 Tin K1 Implants K1 Wiring K1 Parasitic capacitance SP None LK http://dx.doi.org/https://doi.org/10.1109/IEDM.2009.5424249 DO https://doi.org/10.1109/IEDM.2009.5424249 SF ELIB - SuUB Bremen
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